期刊
SOLAR ENERGY MATERIALS AND SOLAR CELLS
卷 166, 期 -, 页码 127-131出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.solmat.2017.03.015
关键词
Germanium; Solar cell; MOCVD; Epitaxial growth; Isobutylgermane; Discontinuous doping
资金
- Korea Institute of Energy Technology Evaluation and Planning (KETEP)
- Ministry of Trade, Industry & Energy (MOTIE) of the Republic of Korea [20164030201380]
- National Research Foundation of Korea Grant - Korean Government (MEST) [NRF-2016M1B3A1A02937736]
- National Research Foundation of Korea [2016M1B3A1A02937736] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Single-junction Ge solar cells have been epitaxially grown on GaAs (001) substrates by a low pressure metalorganic chemical vapor deposition using isobutylgermane. Various growth conditions have been studied to reduce the high doping level of over 1x10(19) cm(-3) of the p-type Ge epitaxial layer, which is detrimental to the minority carrier collection efficiency. By increasing the growth rate and employing a discontinuous doping technique, the p-type doping level of the epitaxial Ge layer has been lowered to 2x10(18) cm(-3), and the hole mobility increased from 44 to 162 cm(2)/V s. A high power conversion efficiency of 6.72% can be achieved under AM1.5 G illumination by the epitaxial Ge solar cell with the lowered doping level in the p-type Ge base region. The spectral response of the epitaxial Ge solar cell with a 5 mu m thick base layer is good enough to use for InGaP/GaAs/Ge triple-junction solar cells.
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