期刊
SMALL
卷 14, 期 2, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/smll.201701437
关键词
nanostructures arrays; nonvolatile memory; phase separation; solution process; wide-bandgap organic semiconductors
类别
资金
- National Basic Research Program of China [2014CB648300, 2015CB932200]
- National Natural Science Foundation of China [61475074, 61775100, 21471082]
- Changjiang Scholars and Innovative Research Team in University [IRT_15R37]
- Natural Science Foundation of Jiangsu Province [BK20160088]
- Qing Lan Project of Jiangsu Province
- Innovation Team of Talents in Six Fields of Jiangsu Province [XCL-CXTD-009, XYDXX-047]
- Synergetic Innovation Center for Organic Electronics and Information Displays, Excellent Science and Technology Innovation Team of Jiangsu Higher Education Institutions
- Priority Academic Program Development of Jiangsu Higher Education Institutions (PAPD) [YX03001]
- Research Fund for Postgraduate Innovation Project of Jiangsu Province [CXZZ13_0475]
In this paper, the development of organic field-effect transistor (OFET) memory device based on isolated and ordered nanostructures (NSs) arrays of wide-bandgap (WBG) small-molecule organic semiconductor material [2-(9-(4-(octyloxy)phenyl)-9H-fluoren-2-yl)thiophene]3 (WG(3)) is reported. The WG(3) NSs are prepared from phase separation by spin-coating blend solutions of WG(3)/trimethylolpropane (TMP), and then introduced as charge storage elements for nonvolatile OFET memory devices. Compared to the OFET memory device with smooth WG(3) film, the device based on WG(3) NSs arrays exhibits significant improvements in memory performance including larger memory window (approximate to 45 V), faster switching speed (approximate to 1 s), stable retention capability (>10(4) s), and reliable switching properties. A quantitative study of the WG(3) NSs morphology reveals that enhanced memory performance is attributed to the improved charge trapping/charge-exciton annihilation efficiency induced by increased contact area between the WG(3) NSs and pentacene layer. This versatile solution-processing approach to preparing WG(3) NSs arrays as charge trapping sites allows for fabrication of high-performance nonvolatile OFET memory devices, which could be applicable to a wide range of WBG organic semiconductor materials.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据