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High Performance Metal Halide Perovskite Light-Emitting Diode: From Material Design to Device Optimization

期刊

SMALL
卷 13, 期 45, 页码 -

出版社

WILEY-V C H VERLAG GMBH
DOI: 10.1002/smll.201701770

关键词

efficiency; light-emitting diode; perovskite; stability; surface passivation

资金

  1. National Key Research and Development Program of China [2016YFB0401701, 2017YFA0305550]
  2. National Basic Research Program of China [2014CB931702]
  3. NSFC [61604074, 51572128, 51672132]
  4. NSFC-RGC [5151101197]
  5. Natural Science Foundation of Jiangsu Province [BK20160827]
  6. China Postdoctoral Science Foundation [2016M590455]
  7. Fundamental Research Funds for the Central Universities [30915012205, 30916015106, 30917011202]
  8. PAPD of Jiangsu Higher Education Institutions

向作者/读者索取更多资源

Metal halide perovskites have drawn significant interest in the past decade. Superior optoelectronic properties, such as a narrow bandwidth, precise and facile tunable luminance over the entire visible spectrum, and high photoluminescence quantum yield of up to approximate to 100%, render metal halide perovskites suitable for next-generation high-definition displays and healthy lighting systems. The external quantum efficiency of perovskite light-emitting diodes (LEDs) increases from 0.1 to 11.7% in three years; however, the energy conversion efficiency and the long-term stability of perovskite LEDs are inadequate for practical application. Strategies to optimize the emitting layer and the device structure, with respect to material design, synthesis, surface passivation, and device optimization, are reviewed and highlighted. The long-term stability of perovskite LEDs is evaluated as well. Meanwhile, several challenges and prospects for future development of perovskite materials and LEDs are identified.

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