期刊
SMALL
卷 13, 期 18, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/smll.201604179
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资金
- National Natural Science Foundation of China [61376007, 61674137]
- National Key Research and Development Program of China [2016YFB0400802, 2016YFB0402301]
- Natural Science Foundation of Beijing Municipality [2142032]
Atomically thin hexagonal boron nitride (h-BN) is gaining significant attention for many applications such as a dielectric layer or substrate for graphene-based devices. For these applications, synthesis of high-quality and large-area h-BN layers with few defects is strongly desirable. In this work, the aligned growth of millimeter-size single-crystal h-BN domains on epitaxial Ni (111)/sapphire substrates by ion beam sputtering deposition is demonstrated. Under the optimized growth conditions, single-crystal h-BN domains up to 0.6 mm in edge length are obtained, the largest reported to date. The formation of large-size h-BN domains results mainly from the reduced Ni-grain boundaries and the improved crystallinity of Ni film. Furthermore, the h-BN domains show well-aligned orientation and excellent dielectric properties. In addition, the sapphire substrates can be repeatedly used with almost no limit. This work provides an effective approach for synthesizing large-scale high-quality h-BN layers for electronic applications.
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