期刊
SMALL
卷 13, 期 27, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/smll.201700651
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类别
资金
- National Natural Science Foundation of China [11474310, 61605237]
- Jiangsu province
- Suzhou city [BE2014061, BE20160063, BK20150366, BK20150367, ZXG201410, SYG201629, 2011YQ120053, BK20130236, SYG201623]
Chemical vapor deposition (CVD) growth of high-quality graphene has emerged as the most promising technique in terms of its integrated manufacturing. However, there lacks a controllable growth method for producing high-quality and a large-quantity graphene films, simultaneously, at a fast growth rate, regardless of roll-to-roll (R2R) or batch-to-batch (B2B) methods. Here, a stationary-atmospheric-pressure CVD (SAPCVD) system based on thermal molecular movement, which enables fast B2B growth of continuous and uniform graphene films on tens of stacked Cu(111) foils, with a growth rate of 1.5 mu m s(-1), is demonstrated. The monolayer graphene of batch production is found to nucleate from arrays of well-aligned domains, and the films possess few defects and exhibit high carrier mobility up to 6944 cm(2) V-1 s(-1) at room temperature. The results indicate that the SAPCVD system combined with single-domain Cu(111) substrates makes it possible to realize fast batch-growth of high-quality graphene films, which opens up enormous opportunities to use this unique 2D material for industrial device applications.
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