期刊
SMALL
卷 13, 期 24, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/smll.201700268
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资金
- National Natural Science Foundation of China [61604102, 51290273, 91433107, 11404372]
- Youth 973 program [2015CB932700]
- National Key Research & Development Program [2016YFA0201902]
- ARC [DE120101569, DP140101501, FT150100450]
- China Postdoctoral Science Foundation [2014M550303, 2014M551654]
- Natural Science Foundation of Jiangsu Province [BK20130328, BK20150053]
- Priority Academic Program Development of Jiangsu Higher Education Institutions (PAPD)
- Collaborative Innovation Center of Suzhou Nano Science and Technology
- Australian Research Council Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET) [CE170100039]
- Australian Research Council [DE120101569] Funding Source: Australian Research Council
2D transition metal dichalcogenides (TMDCs) have attracted considerable attention due to their impressively high performance in optoelectronic devices. However, efficient infrared (IR) photodetection has been significantly hampered because the absorption wavelength range of most TMDCs lies in the visible spectrum. In this regard, semiconducting 2D MoTe2 can be an alternative choice owing to its smaller band gap approximate to 1 eV from bulk to monolayer and high carrier mobility. Here, a MoTe2/graphene heterostructure photodetector is demonstrated for efficient near-infrared (NIR) light detection. The devices achieve a high responsivity of approximate to 970.82 A W-1 (at 1064 nm) and broadband photodetection (visible-1064 nm). Because of the effective photogating effect induced by electrons trapped in the localized states of MoTe2, the devices demonstrate an extremely high photoconductive gain of 4.69 x 10(8) and detectivity of 1.55 x 10(11) cm Hz(1/2) W-1. Moreover, flexible devices based on the MoTe2/graphene heterostructure on flexible substrate also retains a good photodetection ability after thousands of times bending test (1.2% tensile strain), with a high responsivity of approximate to 60 A W-1 at 1064 nm at V-DS = 1 V, which provides a promising platform for highly efficient, flexible, and low cost broadband NIR photodetectors.
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