期刊
SMALL
卷 13, 期 21, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/smll.201603726
关键词
2D materials; black phosphorus; heterojunctions; logic device; tungsten diselenide
类别
资金
- National Natural Science Foundation of China (NSFC) [11104204]
- Natural Science Foundation of Shanghai [16ZR1439400, 17ZR1447700]
p-n junctions play an important role in modern semiconductor electronics and optoelectronics, and field-effect transistors are often used for logic circuits. Here, gate-controlled logic rectifiers and logic optoelectronic devices based on stacked black phosphorus (BP) and tungsten diselenide (WSe2) heterojunctions are reported. The gate-tunable ambipolar charge carriers in BP and WSe2 enable a flexible, dynamic, and wide modulation on the heterojunctions as isotype (p-p and n-n) and anisotype (p-n) diodes, which exhibit disparate rectifying and photovoltaic properties. Based on such characteristics, it is demonstrated that BP-WSe2 heterojunction diodes can be developed for high-performance logic rectifiers and logic optoelectronic devices. Logic optoelectronic devices can convert a light signal to an electric one by applied gate voltages. This work should be helpful to expand the applications of 2D crystals.
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