3.8 Proceedings Paper

Electrical Integrity and Anisotropy in Dielectric Breakdown of Layered h-BN Insulator

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ELECTROCHEMICAL SOC INC
DOI: 10.1149/07901.0091ecst

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  1. JSPS Core-to-Core Program
  2. A. Advanced Research Networks
  3. JSPS KAKENHI [JP25107004, JP25107002, JP16H04343, JP16K14446, JP26886003]
  4. Grants-in-Aid for Scientific Research [25107004] Funding Source: KAKEN

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We report the complete set of dielectric breakdown strength (E-BD) for h-BN, that is, similar to 12 MV/cm for out-of-plane E-BD is four times higher than that for in-plane E-BD and it is larger than that for diamond. The large anisotropy in dielectric constant (i.e., related with band gap) due to the layered structure causes this anisotropy.

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