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The Morphologies of the Semiconductor Oxides and Their Gas-Sensing Properties

期刊

SENSORS
卷 17, 期 12, 页码 -

出版社

MDPI
DOI: 10.3390/s17122779

关键词

morphology; nanostructure; semiconductor; oxide; gas sensor

资金

  1. National Key R&D Program of China [2017YFC0804105]
  2. National Foundation of China [41722405, 2011YQ03113, 20140204022GX, 41374075]
  3. Fundamental Research Funds for the Central Universities
  4. Education Department of Jilin Province [440020032122]

向作者/读者索取更多资源

Semiconductor oxide chemoresistive gas sensors are widely used for detecting deleterious gases due to low cost, simple preparation, rapid response and high sensitivity. The performance of gas sensor is greatly affected by the morphology of the semiconductor oxide. There are many semiconductor oxide morphologies, including zero-dimensional, one-dimensional, two-dimensional and three-dimensional ones. The semiconductor oxides with different morphologies significantly enhance the gas-sensing performance. Among the various morphologies, hollow nanostructures and core-shell nanostructures are always the focus of research in the field of gas sensors due to their distinctive structural characteristics and superior performance. Herein the morphologies of semiconductor oxides and their gas-sensing properties are reviewed. This review also proposes a potential strategy for the enhancement of gas-sensing performance in the future.

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