期刊
SEMICONDUCTORS
卷 51, 期 3, 页码 407-411出版社
PLEIADES PUBLISHING INC
DOI: 10.1134/S1063782617030228
关键词
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资金
- Ministry of Education and Science of the Russian Federation [RFMEFI59414X0007, 14.594.21.0007]
- Russian Foundation for Basic Research [14-07-00408, 14-0700688, 14-47-03605, 15-38-20369, 15-29-01171, 15-0703580, 15-07-03331, 16-29-05385, 16-07-00842]
SnO2:Sb thin films are grown by pulsed laser deposition with high-speed particle separation on quartz-glass substrates without post-deposition annealing under different deposition conditions in the range of the energy densities on the target from 3.4 to 6.8 J/cm(2). Their optical, structural, and electrical properties are studied. It is found that the energy density on the target affects the SnO2: Sb film conductivity and transmittance. The optimum conditions of film growth by the droplet-free pulsed laser deposition method are determined. A resistivity minimum of 1.2 x 10(-3) Omega cm is observed at an energy density on the target of 4.6 J/cm(2), a substrate temperature of 300 degrees C, and an oxygen pressure of 20 mTorr in the vacuum chamber during deposition.
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