期刊
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
卷 32, 期 6, 页码 -出版社
IOP Publishing Ltd
DOI: 10.1088/1361-6641/aa6c86
关键词
memristive device; neuromorphic engineering; SONOS transistor; adaptive electronics
类别
资金
- Deutsche Forschungsgemeinschaft (DFG) [FOR 2093]
State-of-the-art SONOS (silicon-oxide-nitride-oxide-polysilicon) field effect transistors were operated in a memristive switching mode. The circuit design is a variation of the MemFlash concept and the particular properties of depletion type SONOS-transistors were taken into account. The transistor was externally wired with a resistively shunted pn-diode. Experimental current-voltage curves show analog bipolar switching characteristics within a bias voltage range of +/- 10 V, exhibiting a pronounced asymmetric hysteresis loop. The experimental data are confirmed by SPICE simulations. The underlying memristive mechanism is purely electronic, which eliminates an initial forming step of the as-fabricated cells. This fact, together with reasonable design flexibility, in particular to adjust the maximum RON/ROFF ratio, makes these cells attractive for neuromorphic applications. The relative large set and reset voltage around +/- 10 V might be decreased by using thinner gate-oxides. The all-electric operation principle, in combination with an established silicon manufacturing process of SONOS devices at the Semiconductor Foundry X-FAB, promise reliable operation, low parameter spread and high integration density.
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