期刊
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
卷 32, 期 12, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/1361-6641/aa96e8
关键词
GaN/Si; dislocations; carrier lifetime; photoluminescence spectroscopy; microwave probed photoconductivity; photoionization spectroscopy; confocal microscopy
类别
资金
- Lithuanian Research Council [LAT 01/2016]
The radiative and non-radiative recombination carrier decay lifetimes in GaN epi-layers grown by metal-organic chemical vapour deposition technology on Si substrates were measured by contactless techniques of time-resolved photoluminescence and microwave-probed transients of photoconductivity. The lifetime variations were obtained to be dependent on growth regimes. These variations have been related to varied densities of edge dislocations associated with growth temperature. It has been also revealed that the lateral carrier lifetime and photoluminescence intensity distribution is determined by the formation of dislocation clusters dependent on the growth conditions. For low excitation level, the asymptotic component within the excess carrier decay transients is attributed to carrier trapping and anomalous diffusion through random-walk processes within dislocation cluster regions and barriers at dislocation cores. The two-componential decay process at high excitation conditions, where excess carriers may suppress barriers, proceeds through a nonlinear recombination, where band-to-band transitions determine the nonlinearity of the process, while the asymptotic component is ascribed to the impact of D-A pair PL within the long-wavelength wing of the UV-PL band.
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