期刊
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
卷 33, 期 1, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/1361-6641/aa9c4d
关键词
beta-Ga2O3; molecular beam epitaxy; Ga etching; oxides
类别
资金
- Air Force Office of Scientific Research (AFOSR) [FA9550-14-1-0112]
- MRSEC Program of the US National Science Foundation [DMR-1121053]
We investigated the homoepitaxial growth and etching characteristics of (001) beta-Ga2O3 by plasma-assisted molecular beam epitaxy. The growth rate of beta-Ga2O3 increased with increasing Ga-flux, reaching a clear plateau of 56 nm h(-1), and then decreased at higher Ga-flux. The growth rate decreased from 56 to 42 nm h(-1) when the substrate temperature was increased from 750 degrees C to 800 degrees C. The growth rate was negative (net etching) when only Ga-flux was supplied. The etching rate proportionally increased with increasing the Ga-flux, reaching 84 nm h(-1). The etching was enhanced at higher temperatures. It was found that Ga-etching of (001) beta-Ga2O3 substrates prior to the homoepitaxial growth markedly improved the surface roughness of the film.
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