期刊
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
卷 32, 期 3, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/1361-6641/32/3/035001
关键词
Ge; parasitic resistance; metal S/D; n-MOSFET
类别
资金
- (JSPS) KAKENHI [25249035, 26289090]
- JSPS
- Grants-in-Aid for Scientific Research [25249035, 26289090] Funding Source: KAKEN
We investigated the source/drain (S/D) parasitic resistance (R-P) of a Ge n-channel metal-oxide-semiconductor field-effect transistor (n-MOSFET) with TiN-S/D. The RP was as high as similar to 1400 ohm, which is attributed to a very thin amorphous interlayer (a-IL) at a TiN/Ge interface. To solve this problem, n-MOSFETs with an embedded S/D structure were fabricated, of which the S/D was formed by the etching of a Ge layer using 0.03%-H2O2 solution followed by TiN sputter deposition. The electrical performances were investigated for devices with etching depths in the range of 2-22 nm. The devices with etching depths of 2-5 nm did not work. The devices with etching depths of 12-15 nm showed a quite normal transistor operation, and the RP was as low as similar to 130 ohm, which is comparable to that of a p-MOSFET with PtGe-S/D. However, R(P)s of the devices with etching depths of similar to 22 nm was considerably high. The reason for these results is discussed on the basis of an a-IL formation at the sidewall of the engraved S/D region.
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