期刊
PHYSICAL REVIEW B
卷 97, 期 4, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.97.041201
关键词
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资金
- German Academic Exchange Service (DAAD) under the Leibniz-DAAD postdoctoral fellowship program
- IFW excellence program
We combine electron energy-loss spectroscopy and first-principles calculations based on density-functional theory (DFT) to identify the lowest indirect exciton state in the in-plane charge response of hexagonal boron nitride (h-BN) single crystals. This remarkably sharp mode forms a narrow pocket with a dispersion bandwidth of similar to 100 meV and, as we argue based on a comparison to our DFT calculations, is predominantly polarized along the Gamma K direction of the hexagonal Brillouin zone. Our data support the recent report by Cassabois et al. [Nat. Photonics 10, 262 (2016)] who indirectly inferred the existence of this mode from the photoluminescence signal, thereby establishing h-BN as an indirect semiconductor.
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