期刊
PHYSICAL REVIEW B
卷 97, 期 3, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.97.035419
关键词
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资金
- CAPES
- FAPESP
- FAPEMIG
- CNPq
- Nanocarbon INCT
- Nanofabrication Network, Brazil
Landau level broadening mechanisms in electrically neutral and quasineutral graphene were investigated through micro-magneto-Raman experiments in three different samples, namely, a natural single-layer graphene flake and a back-gated single-layer device, both deposited over Si/SiO2 substrates, and a multilayer epitaxial graphene employed as a reference sample. Interband Landau level transition widths were estimated through a quantitative analysis of the magnetophonon resonances associated with optically active Landau level transitions crossing the energy of the E-2g Raman-active phonon. Contrary to multilayer graphene, the single-layer graphene samples show a strong damping of the low-field resonances, consistent with an additional broadening contribution of the Landau level energies arising from a random strain field. This extra contribution is properly quantified in terms of a pseudomagnetic field distribution Delta B = 1.0 - 1.7 T in our single-layer samples.
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