期刊
NANOPHOTONICS
卷 7, 期 2, 页码 393-420出版社
WALTER DE GRUYTER GMBH
DOI: 10.1515/nanoph-2017-0085
关键词
mid-IR; integrated photonics; silicon photonics; spectrometer; optical sensor
资金
- DOE-NNSA [DE-NA0002509]
- Defense Threat Reduction Agency Grant [HDTRA1-13-1-0001]
- National Science Foundation [1453218, 1506605]
- National Natural Science Foundation of China [61475129]
- Directorate For Engineering
- Div Of Electrical, Commun & Cyber Sys [1453218] Funding Source: National Science Foundation
The emergence of silicon photonics over the past two decades has established silicon as a preferred substrate platform for photonic integration. While most silicon-based photonic components have so far been realized in the near-infrared (near-IR) telecommunication bands, the mid-infrared (mid-IR, 2-20-mu m wavelength) band presents a significant growth opportunity for integrated photonics. In this review, we offer our perspective on the burgeoning field of mid-IR integrated photonics on silicon. A comprehensive survey on the state-of-the-art of key photonic devices such as waveguides, light sources, modulators, and detectors is presented. Furthermore, on-chip spectroscopic chemical sensing is quantitatively analyzed as an example of mid-IR photonic system integration based on these basic building blocks, and the constituent component choices are discussed and contrasted in the context of system performance and integration technologies.
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