期刊
PHYSICAL REVIEW B
卷 97, 期 7, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.97.075404
关键词
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资金
- Innovate UK Grant [65431-468182]
- European Graphene Flagship project
- EPSRC [EP/K005014/1, EP/P510221/1, EP/N010345/1] Funding Source: UKRI
- Engineering and Physical Sciences Research Council [EP/P510221/1, EP/N010345/1] Funding Source: researchfish
We determine conditions for the formation of compressible stripes near the quantum Hall effect (QHE) edges of top-gated epitaxial graphene on Si-terminated SiC (G/SiC) and compare those to graphene exfoliated onto insulating substrate in the field-effect-transistor (GraFET) geometry. For G/SiC, a large density of localized surface states on SiC just underneath graphene layer and charge transfer between them lead both to doping of graphene and to screening of potential profile near its edge. This suppresses formation of compressible stripes near QHE edges in graphene, making them much narrower than the corresponding compressible stripes in GraFETs.
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