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Halide Perovskites for Applications beyond Photovoltaics

期刊

SMALL METHODS
卷 2, 期 3, 页码 -

出版社

WILEY-V C H VERLAG GMBH
DOI: 10.1002/smtd.201700310

关键词

field-effect transistors; halide perovskites; light-emitting diodes; memory devices; X-ray detectors

资金

  1. Future Material Discovery Program through the National Research Foundation of Korea [2016M3D1A1027666]
  2. Basic Science Research Program through the National Research Foundation of Korea [2017R1A2B3009135]
  3. Nano Material Technology Development Program through the National Research Foundation of Korea [2016M3A7B4910]
  4. International Energy Joint R&D Program of the Korea Institute of Energy Technology Evaluation and Planning [20168510011350]
  5. National Research Foundation of Korea [2016M3A7B4910495, 2017R1A2B3009135, 2016M3D1A1027666] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

向作者/读者索取更多资源

In recent years, halide perovskites have been attracting intense attention as novel materials for photovoltaic applications due to their high carrier mobility, extraordinarily long carrier diffusion lengths, and suitable optical bandgaps. Furthermore, there are extensive applications of halide perovskites owing to their exceptional attributes in different areas, such as light-emitting diodes, lasers, X-ray detectors, memory devices, and more. Here, the unique characteristics of halide perovskite materials are described, including their electrical and optical properties, to explain why these materials are so exciting for a wide variety of applications. After introducing the synthesis techniques used to prepare halide perovskite films, recent advances on the applications of halide perovskites beyond photovoltaics are addressed. The challenges to be overcome for several applications are described and it is suggested that halide perovskites are equivalent to a gold standard in developing next-generation optoelectronic and electronic devices.

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