期刊
PHYSICAL REVIEW B
卷 97, 期 11, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.97.115307
关键词
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资金
- Basic Science Research Program
- Priority Research Centers Program
- National Research Foundation of Korea - Ministry of Education [2009-0093818, 2015R1A2A2A01003621, 2015R1C1A1A01055922, 2015R1D1A1A01058332, 2010-0020414, 2017R1D1A1B03030740]
- MSICT
- POSTECH
- National Research Foundation of Korea [2015R1D1A1A01058332, 2017R1D1A1B03030740, 2015R1C1A1A01055922, 2010-0008842, 2010-0020414, 21A20131100002, 2015R1A2A2A01003621, 2009-0093818] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Through Bi deposition on the single-crystalline MoS2 surface, we find that the density of the sulfur vacancy is a critical parameter for the growth of the crystalline Bi overlayer or cluster at room temperature. Also, the MoS2 band structure is significantly modified near Gamma due to the orbital hybridization with an adsorbed Bi monolayer. Our experimental observations and analysis in combination with density functional theory calculation suggest the importance of controlling the sulfur vacancy concentration in realizing an exotic quantum phase based on the van der Waals interface of Bi and MoS2.
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