Structure and optoelectrical properties of transparent conductive MGZO films deposited by magnetron sputtering

The transparent conductive Mg-Ga co-doped ZnO (MGZO) films were prepared by radio-frequency (RF) magnetron sputtering. The influence of substrate temperature on the structural and optoelectrical properties of the films is studied. The results show that all the films possess a preferential orientation along the (002) plane. With the increase of substrate temperature, the structure and optoelectrical properties of the films can be changed. When substrate temperature is 300 degrees C, the deposited film exhibits the best crystalline quality and optoelectrical properties, with the minimum micro strain of 1.09x10(-3), the highest average visible transmittance of 82.42%, the lowest resistivity of 1.62x10(-3) Omega.cm and the highest figure of merit of 3.18x10(3) Omega(-1).cm(-1). The optical bandgaps of the films are observed to be in the range of 3.342-3.545 eV. The refractive index dispersion curves obey the Sellmeier's dispersion model.