期刊
PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS
卷 63, 期 4, 页码 105-120出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.pcrysgrow.2017.10.001
关键词
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资金
- Initiation Grant from HKUST [IGN15EG01]
- Innovation Technology Fund of Hong Kong [ITS/273/16FP]
Monolithic integration of 111-V on silicon has been a scientifically appealing concept for decades. Notable progress has recently been made in this research area, fueled by significant interests of the electronics industry in high-mobility channel transistors and the booming development of silicon photonics technology. In this review article, we outline the fundamental roadblocks for the epitaxial growth of highly mismatched III-V materials, including arsenides, phosphides, and antimonides, on (001) oriented silicon substrates. Advances in heteroepitaxy and selective-area hetero-epitaxy from micro to nano length scales are discussed. Opportunities in emerging electronics and integrated photonics are also presented.
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