期刊
C-JOURNAL OF CARBON RESEARCH
卷 4, 期 2, 页码 -出版社
MDPI
DOI: 10.3390/c4020034
关键词
TEM; graphene; doping; p-type; n-type; applications
资金
- R & D program, Sungkyunkwan University
Much recent work has focused on improving the performance of graphene by various physical and chemical modification approaches. In particular, chemical doping of n-type and p-type dopants through substitutional and surface transfer strategies have been carried out with the aim of electronic and band-gap tuning. In this field, the visualization of (i) The intrinsic structure and morphology of graphene layers after doping by various chemical dopants, (ii) the formation of exotic and new chemical bonds at surface/interface between the graphene layers and the dopants is highly desirable. In this short review, recent advances in the study of doped-graphenes and of the n-type and p-type doping techniques through transmission electron microscopy (TEM) analysis and observation at the nanoscale will be addressed.
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