4.6 Article

Giant anisotropic magnetoresistance and planar Hall effect in the Dirac semimetal Cd3As2

期刊

PHYSICAL REVIEW B
卷 97, 期 20, 页码 -

出版社

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.97.201110

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资金

  1. Research Grants Council of the Hong Kong Special Administrative Region in China [16305215, 17301116, C6026-16W, AoE/P-04/08]
  2. National Natural Science Foundation of China [11574129]
  3. Natural Science Foundation of Guangdong Province [2015A030313840]
  4. Raith-HKUST Nanotechnology Laboratory at MCPF

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Anisotropic magnetoresistance is the change tendency of resistance of a material on the mutual orientation of the electric current and the external magnetic field. Here, we report experimental observations in the Dirac semimetal Cd3As2 of giant anisotropic magnetoresistance and its transverse version, called the planar Hall effect. The relative anisotropic magnetoresistance is negative and up to - 68% at 2 K and 10 T. The high anisotropy and the minus sign in this isotropic and nonmagnetic material are attributed to a field- dependent current along the magnetic field, which may be induced by the Berry curvature of the band structure. This observation not only reveals unusual physical phenomena inWeyl and Dirac semimetals, but also finds additional transport signatures of Weyl and Dirac fermions other than negative magnetoresistance.

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