期刊
PROCEEDINGS OF THE IEEE
卷 105, 期 9, 页码 1770-1789出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JPROC.2017.2684830
关键词
Array integration; embedded memory; emerging memory; resistive random access memory (RRAM); solid-state memory; storage class memory
Resistive random access memory (RRAM) is regarded as one of the most promising emerging memory technologies for next-generation embedded, standalone nonvolatile memory (NVM), and storage class memory (SCM) due to its speed, density, cost, and scalability. Considerable progress has been made in recent years on the manufacturability of RRAM, with low-density RRAM products now in production and the path to higher density parts becoming clearer. This review updates the learning on the fundamental materials and process integration needed for high-volume manufacturing and summarizes very recent progress on array level performance improvement methodology using novel techniques, and circuit level contributions for different applications. The device performance, array integration, and device/circuit codesign for memory systems are discussed. Novel applications besides embedded memory and standalone memory are addressed, including hardware security, neuromorphic computing, and nonvolatile logic systems.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据