4.6 Article

Correlation between superconductivity, band filling, and electron confinement at the LaAlO3/SrTiO3 interface

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PHYSICAL REVIEW B
卷 97, 期 24, 页码 -

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AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.97.245113

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  1. DESCO program of the Netherlands Organization for Scientific Research (NWO)
  2. European Research Council (ERC)

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By combined top-and backgating, we explore the correlation of superconductivity with band filling and electron confinement at the LaAlO3/SrTiO3 interface. We find that the top- and backgate voltages have distinctly different effects on the superconducting critical temperature, implying that the confining potential well has a profound effect on superconductivity. We investigate the origin of this behavior by comparing the gate dependence of T-c to the corresponding evolution of the band filling with gate voltage. For several backgate voltages, we observe maximum T-c to consistently coincide with a kink in tuning the band filling for high topgate voltage. Self-consistent Schrodinger-Poisson calculations relate this kink to a Lifshitz transition of the second d(xy) subband. These results establish a major role for confinement-induced subbands in the phase diagram of SrTiO3 surface states, and establish gating as a means to control the relative energy of these states.

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