期刊
POLYMER BULLETIN
卷 75, 期 7, 页码 2769-2778出版社
SPRINGER
DOI: 10.1007/s00289-017-2178-9
关键词
PVDF thin film; RRAM; Non-volatile memory; Rectification; Resistive switching
资金
- DAE-BRNS [2012/20/37P/09/BRNS]
- DST [SERB/F/0724/2013-2014]
- UGC-MRP [41-846/2012]
- UGCSAP [F.530/15/DRS/2009]
- Central Instrumentation Facility (CIF) at Pondicherry University
- UGC
This work reports the transition from rectifying type to resistive switching in semicrystalline, unpoled intrinsic form of polyvinylidene fluoride (PVDF) thin films in Ag/PVDF/Au capacitor-like structures. The transition is noted after the breakdown of Schottky barrier at electric fields of 3 MV/cm along with the changeover from asymmetric to symmetric I-V curves. The sharp change from asymmetric to symmetric I-V loops further revealed bipolar-resistive switching. The asymmetric and symmetric I-V transport mechanisms are evaluated with the Fowler-Nordheim tunneling and space-charge-limited current mechanisms at high voltages. Furthermore, the resistive-switching phenomena are attributed to the filament formation from the ohmic response of the low-resistance state.
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