Electrical properties and conduction mechanism of in situ HCl-doped emeraldine salt polyaniline films deposited on n-ZnS/p-Si(100)

The diode properties and conduction mechanism of the p-PAni/n-ZnS/p-Si(100) synthesize via oxidative polymerization at room temperature were investigated for the first time. The morphological, optical and electrical/diode properties were studied citing the changes made by integrating ES polyaniline (PAni) films doped with 0.05 M to 0.20 M of HCl on n-ZnS/p-Si(100)-onits properties and performance. The room temperature I-V characteristics of the heterojunction exhibited good rectifying behavior with a breakdown at the reverse bias for the 0.20 M PZ heterojunction. Diode parameters at forward bias such as the cut-in voltage (1.83-3.66 volts), dynamic resistance (3.91-96.13 k Omega), ideality factor (3.05-6.34) and saturation current (7.03x10(-8)-1.40x10(-4) A) were determined. The current transport mechanism were found to be governed dominantly by space charge limited conduction (SCLC) with possible presence of defects in the surface and in the bulk of the material. (C) 2018 Elsevier Ltd. All rights reserved.