4.6 Article

Magnetoresistance and Shubnikov-de Haas oscillations in layered Nb3SiTe6 thin flakes

期刊

PHYSICAL REVIEW B
卷 97, 期 23, 页码 -

出版社

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.97.235133

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资金

  1. National Key Research and Development Program of China [2016YFA0401003]
  2. Natural Science Foundation of China [11774353, 11574320, 11374302, U1432251, U1732274]
  3. International Users of Hefei Science Center of CAS [2016HSC-IU009]
  4. CAS/SAFEA international partnership program for creative research teams of China

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We present the magnetoresistance (MR) and Hall resistivity of layered ternary Nb3SiTe6 thin flakes with magnetic field up to 33 T. The flakes show strong angle-dependent MR properties and unsaturated quasilinear dependence accompanied with Shubnikov-de Haas (SdH) oscillations. Hall resistivity study demonstrates that the hole carriers dominate the transport properties in the whole temperature range. The angle-dependent SdH oscillations reveal a two-dimensional Fermi surface of Nb3SiTe6. Furthermore, by analysis of SdH oscillations, we observed a nontrivial 7r-Berry phase in the SdH oscillations which suggests the nontrivial topological nature of Nb3SiTe6.

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