期刊
ADVANCED QUANTUM TECHNOLOGIES
卷 1, 期 1, 页码 -出版社
WILEY
DOI: 10.1002/qute.201700006
关键词
charge balance; electron-transport layer; operating stability; quantum dot light-emitting diodes (QLEDs); Y-doped ZnO
资金
- Industrial Strategic Technology Development Program [10045145]
- Technology Innovation Program - Ministry of Trade, Industry and Energy (MOTIE, Korea) [10077471]
- Mid-career Researcher Program - National Research Foundation of Korea (NRF) [2016R1A2B3009301]
- National Research Foundation of Korea [2016R1A2B3009301] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Charge balance between electrons and holes, which are injected into the quantum dot (QD) emission layer (EML), is critical for realizing stable and efficient QD light-emitting diodes (QLEDs). ZnO has been widely used as an electron-transport layer (ETL) because of its superior performance compared to other metal oxides. However, nearly barrier-free electron injection into the QD EML leads to spontaneous charge transfer and excess electron injection, resulting in reduced device performance. Here, to adjust electron-hole balance and thereby improve the lifetime and efficiency of QLEDs, we introduce an yttrium (Y)-doped ZnO (YZO) ETL into QLEDs. The sol-gel processed YZO film, with a mobility that could be simply tuned by varying the Y concentration, provides enhanced charge-transport balance by suppressing excess electron flow to the QD EML. Furthermore, YZO helps suppress QD charging and smooth the surface morphology. Applying the YZO ETL into the inverted-structure QLED enables us to achieve color-saturated red emission, an improved external quantum efficiency of up to 8.6%, and an eight times longer lifetime compared to the device with undoped ZnO. This result provides a simple method for enhancing the performance of QLEDs by easily controlling metal doping concentration in the sol-gel processed ZnO ETL.
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