期刊
PHYSICAL REVIEW LETTERS
卷 118, 期 6, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.118.067702
关键词
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资金
- Research Grants Council of Hong Kong [16302215, HKU9/CRF/13G, 604112, N_HKUST613/12]
- UT-Dallas Research Enhancement Funds
- NSF [PHY11-25915]
We fabricate high-mobility p-type few-layer WSe2 field-effect transistors and surprisingly observe a series of quantum Hall (QH) states following an unconventional sequence predominated by odd-integer states under a moderate strength magnetic field. By tilting the magnetic field, we discover Landau level crossing effects at ultralow coincident angles, revealing that the Zeeman energy is about 3 times as large as the cyclotron energy near the valence band top at the Gamma valley. This result implies the significant roles played by the exchange interactions in p-type few-layer WSe2, in which itinerant or QH ferromagnetism likely occurs. Evidently, the G valley of few-layer WSe2 offers a unique platform with unusually heavy hole carriers and a substantially enhanced g factor for exploring strongly correlated phenomena.
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