4.8 Article

Giant Quantum Hall Plateau in Graphene Coupled to an InSe van der Waals Crystal

期刊

PHYSICAL REVIEW LETTERS
卷 119, 期 15, 页码 -

出版社

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.119.157701

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资金

  1. Engineering and Physical Sciences Research Council (EPSRC) [EP/M012700/1]
  2. EU FP7 Graphene Flagship Project [604391]
  3. University of Nottingham
  4. National Academy of Sciences of Ukraine
  5. RFBR [15-02-01221, 17-02-01129]
  6. EPSRC [EP/K005014/1, EP/N010345/1, EP/M012700/1] Funding Source: UKRI
  7. Engineering and Physical Sciences Research Council [EP/N010345/1, EP/M012700/1, 1642371] Funding Source: researchfish

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We report on a giant quantum Hall effect plateau in a graphene-based field-effect transistor where graphene is capped by a layer of the van der Waals crystal InSe. The giant quantum Hall effect plateau arises from the close alignment of the conduction band edge of InSe with the Dirac point of graphene. This feature enables the magnetic-field- and electric-field-effect-induced transfer of charge carriers between InSe and the degenerate Landau level states of the adjacent graphene layer, which is coupled by a van der Waals heterointerface to the InSe.

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