期刊
PHYSICAL REVIEW LETTERS
卷 118, 期 3, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.118.036803
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资金
- Deutsche Forschungsgemeinschaft through the Transregional Collaborative Research Center [TRR 80]
- BMBF via ENREKON [03EK3015]
- SNSF [200021_149192/1]
- Swiss National Science Foundation (SNF) [200021_149192] Funding Source: Swiss National Science Foundation (SNF)
We deduce the intrinsic conductivity properties of the ferroelectric domain walls around the topologically protected domain vortex cores in multiferroic YMnO3. This is achieved by performing a careful equivalent-circuit analysis of dielectric spectra measured in single-crystalline samples with different vortex densities. The conductivity contrast between the bulk domains and the less conducting domain boundaries is revealed to reach up to a factor of 500 at room temperature, depending on the sample preparation. Tunneling of localized defect charge carriers is the dominant charge-transport process in the domain walls that are depleted of mobile charge carriers. This work demonstrates that, via equivalentcircuit analysis, dielectric spectroscopy can provide valuable information on the intrinsic charge-transport properties of ferroelectric domain walls, which is of high relevance for the design of new domain-wall-based microelectronic devices.
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