4.8 Article

Elemental Topological Dirac Semimetal: α-Sn on InSb(111)

期刊

PHYSICAL REVIEW LETTERS
卷 118, 期 14, 页码 -

出版社

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.118.146402

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资金

  1. U.S. Department of Energy (DOE), Office of Science (OS), Office of Basic Energy Sciences, Division of Materials Science and Engineering [DE-FG02-07ER46383]
  2. National Science Foundation [EFMA-1542747]
  3. Office of Basic Energy Sciences of the U.S. DOE [DE-AC02-05CH11231]
  4. ALS Doctoral Fellowship in Residence
  5. Thematic Project at Academia Sinica
  6. Natural Sciences and Engineering Research Council of Canada
  7. National Science Foundation of China [11204133]
  8. Max Planck Korea/POSTECH Research Initiative of the NRF [2016K1A4A4A01922028]
  9. Emerging Frontiers & Multidisciplinary Activities
  10. Directorate For Engineering [1542747] Funding Source: National Science Foundation
  11. National Research Foundation of Korea [2016K1A4A4A01922136] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

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Three-dimensional (3D) topological Dirac semimetals (TDSs) are rare but important as a versatile platform for exploring exotic electronic properties and topological phase transitions. A quintessential feature of TDSs is 3D Dirac fermions associated with bulk electronic states near the Fermi level. Using angle-resolved photoemission spectroscopy, we have observed such bulk Dirac cones in epitaxially grown alpha-Sn films on InSb(111), the first such TDS system realized in an elemental form. First-principles calculations confirm that epitaxial strain is key to the formation of the TDS phase. A phase diagram is established that connects the 3D TDS phase through a singular point of a zero-gap semimetal phase to a topological insulator phase. The nature of the Dirac cone crosses over from 3D to 2D as the film thickness is reduced.

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