4.8 Article

Topological Exciton Bands in Moire Heterojunctions

期刊

PHYSICAL REVIEW LETTERS
卷 118, 期 14, 页码 -

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AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.118.147401

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资金

  1. Department of Energy, Office of Basic Energy Sciences [DE-FG02-ER45118, DE-SC0012670]
  2. Welch foundation [TBF1473]
  3. Department of Energy, Office of Science, Materials Sciences and Engineering Division
  4. U.S. Department of Energy (DOE) [DE-SC0012670] Funding Source: U.S. Department of Energy (DOE)

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Moire patterns are common in van der Waals heterostructures and can be used to apply periodic potentials to elementary excitations. We show that the optical absorption spectrum of transition metal dichalcogenide bilayers is profoundly altered by long period moire patterns that introduce twist-angle dependent satellite excitonic peaks. Topological exciton bands with nonzero Chern numbers that support chiral excitonic edge states can be engineered by combining three ingredients: (i) the valley Berry phase induced by electron-hole exchange interactions, (ii) the moire potential, and (iii) the valley Zeeman field.

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