期刊
PHYSICAL CHEMISTRY CHEMICAL PHYSICS
卷 19, 期 19, 页码 11864-11868出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c7cp01461a
关键词
-
资金
- National Basic Research Program of China [2014CB921101]
- National Key Research and Development Program of China [2016YFA0300803]
- National Natural Science Foundations of China [51471085, 51331004, 11174131, 61274102]
- Scientific Research Foundation of Nanjing Institute of Technology [QKJB201409]
We demonstrate that a bipolar non-volatile resistive switching behaviour with negative differential resistance (NDR) effect is realized in a Cu/BaTiO3/Ag device, which was deposited on a Si substrate via magnetron sputtering equipment. We suggest that the bipolar resistive switching is dominated by the trapping/ detrapping of electrons at the BaTiO3-Cu interface. In addition, we demonstrate that the device exhibits good performance, including a large on/off ratio, high reliability and long retention time. Therefore, BaTiO3 may become a good candidate for application in resistive switching random access memory (RRAM) devices.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据