4.7 Article

Large photoelectric-gating effect of two-dimensional van-der-Waals organic/tungsten diselenide heterointerface

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NATURE RESEARCH
DOI: 10.1038/s41699-018-0066-2

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资金

  1. National Program for Thousand Young Talents of China
  2. National Natural Science Foundation of China [51773041, 21544001, 21603038]
  3. Shanghai Committee of Science and Technology in China [18ZR1404900]
  4. State Key Laboratory of Molecular Engineering of Polymers and Fudan University

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Photo-or photoelectric-gating modulation is a promising strategy for high-performance photodetectors, which amplifies photoresponsivity by long-lived trapped charges at the interface. However, the performance is normally limited by the uncontrollable trapping process. Here, we develop a large photoelectric-gating, which enhances interfacial charge trapping process by a van-der-Waals interface with an electric-gating tunable energy barrier in the band alignment. By synergy of photo-gating and electric-gating effects, responsivity and detectivity of 1,4-bis(4-methylstyryl)benzene/tungsten diselenide (WSe2) increase by 25-fold and 3-fold to 3.6 x 10(6) A/W and 8.6 x 10(14) Jones. High-quality two-dimensional van-der-Waals interface is of great importance. Sufficient supply of gas-phase molecules in physical vapor deposition is pivotal to obtain such interface between organic crystal and WSe2. As an application, an electric-gating switchable photodetector has been developed, showing great potential of this strategy not only in high-performance photodetectors but also in new photoelectrical devices.

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