相关参考文献
注意：仅列出部分参考文献，下载原文获取全部文献信息。Influence of the Al content of the AlGaN buffer layer in AlGaN/GaN high-electron-mobility transistor structures on a Si substrate
Yuya Yamaoka et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2017)
Influence of AlN nucleation layer on vertical breakdown characteristics for GaN-on-Si
J. J. Freedsman et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2016)
Effect of Reduced Extended Defect Density in MOCVD Grown AlGaN/GaN HEMTs on Native GaN Substrates
Travis J. Anderson et al.
IEEE ELECTRON DEVICE LETTERS (2016)
Opportunities and challenges in GaN metal organic chemical vapor deposition for electron devices
Koh Matsumoto et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2016)
Highly uniform AlGaN/GaN HEMT films grown on 200-mm silicon substrates by plasma molecular beam epitaxy
William E. Hoke et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2014)
Structural and optical properties of AlxGa1-xN/GaN high electron mobility transistor structures grown on 200mm diameter Si(111) substrates
Thirumaleshwara N. Bhat et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2014)
Growth techniques to reduce V-defect density in GaN and AlGaN layers grown on 200 mm Si (111) substrate
Hu Liang et al.
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 3-4 (2014)
AlN/AlGaN/GaN buffer optimization on silicon (111): bow and crystal quality control for Si-CMOS fabs
Prem Kumar Kandaswamy et al.
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 3-4 (2014)
Uniform Growth of AlGaN/GaN High Electron Mobility Transistors on 200 mm Silicon (111) Substrate
Dennis Christy et al.
APPLIED PHYSICS EXPRESS (2013)
Direct Current and Microwave Characteristics of Sub-micron AlGaN/GaN High-Electron-Mobility Transistors on 8-Inch Si(111) Substrate
Subramaniam Arulkumaran et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2013)
Control of Thickness and Composition Variation of AlGaN/GaN on 6- and 8-in. Substrates Using Multiwafer High-Growth-Rate Metal Organic Chemical Vapor Deposition Tool
Yoshiki Yano et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2013)
High growth rates of AlN and AlGaN on 8 silicon wafer using metal-organic vapor phase epitaxy reactor
Akinori Ubukata et al.
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 11 (2013)
AlGaN/GaN/AlGaN Double Heterostructures Grown on 200 mm Silicon (111) Substrates with High Electron Mobility
Kai Cheng et al.
APPLIED PHYSICS EXPRESS (2012)
Effect of dislocations on electron mobility in AlGaN/GaN and AlGaN/AlN/GaN heterostructures
Stephen W. Kaun et al.
APPLIED PHYSICS LETTERS (2012)
AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si(111)
S. Tripathy et al.
APPLIED PHYSICS LETTERS (2012)
Influence of threading dislocation density on early degradation in AlGaN/GaN high electron mobility transistors
M. Tapajna et al.
APPLIED PHYSICS LETTERS (2011)
Buffer Thickness Contribution to Suppress Vertical Leakage Current With High Breakdown Field (2.3 MV/cm) for GaN on Si
Iruthayaraj Beaula Rowena et al.
IEEE ELECTRON DEVICE LETTERS (2011)
GaN Power Transistors on Si Substrates for Switching Applications
Nariaki Ikeda et al.
PROCEEDINGS OF THE IEEE (2010)
Influence of Deep Pits on the Breakdown of Metalorganic Chemical Vapor Deposition Grown AlGaN/GaN High Electron Mobility Transistors on Silicon
S. Lawrence Selvaraj et al.
APPLIED PHYSICS EXPRESS (2009)
Correlation of device performance and defects in AlGaN/GaN high-electron mobility transistors
AP Zhang et al.
JOURNAL OF ELECTRONIC MATERIALS (2003)
分享论文
