相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。AlGaN channel field effect transistors with graded heterostructure ohmic contacts
Sanyam Bajaj et al.
APPLIED PHYSICS LETTERS (2016)
An AlN/Al0.85Ga0.15N high electron mobility transistor
Albert G. Baca et al.
APPLIED PHYSICS LETTERS (2016)
AlN/AlGaN HEMTs on AlN substrate for stable high-temperature operation
N. Yafune et al.
ELECTRONICS LETTERS (2014)
MBE-Regrown Ohmics in InAlN HEMTs With a Regrowth Interface Resistance of 0.05 Ω . mm
Jia Guo et al.
IEEE ELECTRON DEVICE LETTERS (2012)
InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts and fT of 370 GHz
Yuanzheng Yue et al.
IEEE ELECTRON DEVICE LETTERS (2012)
Micro and nano analysis of 0.2 Ω mm Ti/Al/Ni/Au ohmic contact to AlGaN/GaN
A. Fontsere et al.
APPLIED PHYSICS LETTERS (2011)
Ultralow nonalloyed Ohmic contact resistance to self aligned N-polar GaN high electron mobility transistors by In(Ga)N regrowth
Sansaptak Dasgupta et al.
APPLIED PHYSICS LETTERS (2010)
Direct contact mechanism of Ohmic metallization to AlGaN/GaN heterostructures via Ohmic area recess etching
Liang Wang et al.
APPLIED PHYSICS LETTERS (2009)
The improvement of ohmic contact of Ti/Al/Ni/Au to AlGaN/GaN HEMT by multi-step annealing method
Qian Feng et al.
SOLID-STATE ELECTRONICS (2009)
Remarkable breakdown voltage enhancement in AlGaN channel high electron mobility transistors
Takuma Nanjo et al.
APPLIED PHYSICS LETTERS (2008)
Ti/Al/Mo/Au Ohmic contacts to all-binary AlN/GaN high electron mobility transistors
Liang Wang et al.
APPLIED PHYSICS LETTERS (2008)
Nb-Ti/Al/Ni/Au based ohmic contacts to AlGaN/GaN
G. Vanko et al.
VACUUM (2007)
Performance enhancement of ohmic contact on n-GaN using Ti-W as metal barrier
S. Fernandez et al.
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY (2007)
First-layer Si metallizations for thermally stable and smooth Ohmic contacts for AIGaN/GaN high electron mobility transistors
Fitih M. Mohammed et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2007)
Effects of plasma treatment on the Ohmic characteristics of Ti/Al/Ti/Au contacts to n-AlGaN
X. A. Cao et al.
APPLIED PHYSICS LETTERS (2006)
Ohmic contact formation mechanism of Ta/Al/Mo/Au and Ti/Al/Mo/Au metallizations on AlGaN/GaN HEMTs
FM Mohammed et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2005)
The role of Al on Ohmic contact formation on n-type GaN and AlGaN/GaN -: art. no. 061908
B Van Daele et al.
APPLIED PHYSICS LETTERS (2005)
Comparative study of Ti/AL/Mo/Au, Mo/Al/Mo/Au, and V/Al/Mo/Au ohmic contacts to AlGaN/GaN heterostructures
D Selvanathan et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2004)
Low-contact-resistance and smooth-surface Ti/Al/Nb/Au ohmic electrode on AlGaN/GaN heterostructure
T Nakayama et al.
APPLIED PHYSICS LETTERS (2004)
An assessment of wide bandgap semiconductors for power devices
JL Hudgins et al.
IEEE TRANSACTIONS ON POWER ELECTRONICS (2003)
Optimisation of the Ti/Al/Ni/Au ohmic contact on AlGaN/GaN FET structures
B Jacobs et al.
JOURNAL OF CRYSTAL GROWTH (2002)
Indium-silicon co-doping of high-aluminum-content AlGaN for solar blind photodetectors
V Adivarahan et al.
APPLIED PHYSICS LETTERS (2001)
Mass transport regrowth of GaN for ohmic contacts to AlGaN/GaN
S Heikman et al.
APPLIED PHYSICS LETTERS (2001)
Effect of N2 discharge treatment on AlGaN/GaN high electron mobility transistor ohmic contacts using inductively coupled plasma
AP Zhang et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A (2000)