期刊
PHYSICA B-CONDENSED MATTER
卷 508, 期 -, 页码 41-46出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.physb.2016.12.016
关键词
Semiconductor; Nanostructured materials; Scanning electron microscopy (SEM); Optical properties; Gamma linear coefficient
In this work, we report the simple, low temperature and rapid microwave-assisted synthesis of undoped and Gadolinium (III) doped lead iodide with different morphologies, i. e. nanorods of average diameter similar to 200 nm and hierarchical (flower-shaped) nanosheets of thicknesses less than 100 nm. Prepared nanostructures were typify in details using a variety of analytical techniques that reveal the well crystallinity with hexagonal structure. We found that by changing the concentrations of Gadolinium (III) one can tailor the size and shape of nanostructures of lead iodide. The presence of Gadolinium (III) doping was assessed by energy dispersive Xray analysis. Optical band gap and Photoluminescence intensity are found to be enhanced due to Gadolinium (III) doping. The value of Gamma linear absorption coefficient is found to be enriched with doping, which suggests its application in radiation detection.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据