期刊
ORGANIC ELECTRONICS
卷 49, 期 -, 页码 64-68出版社
ELSEVIER
DOI: 10.1016/j.orgel.2017.06.044
关键词
Organic; Heterojunction; LED; GaN; Electroluminescence; Exciton
资金
- MOST [104-2221-E-008 -112 -MY3, 105-3113-E-008 -008 -CC2, 105-2221-E-008 -104 -MY3]
An organic/inorganic white-light emitting F8T2 (9,9-dioctylfluorene-co-bithiophene)/GaN heterojunction is reported. The white-light emission is produced by hybridizing the blue light (464 nm) emitted from the GaN MQWs and the yellow/green light (500-650 nm) emitted at the F8T2/p-GaN interface by electroluminescence (EL). The yellow/green light emission in the F8T2 layer is resulted from the carrier accumulation and Frenkel excitons at the F8T2/p-GaN junction interface. It is concluded that the energy barrier and large mobility discrepancy at the F8T2/p-GaN junction interface cause carriers accumulating in the F8T2 side near the F8T2/p-GaN interface. The accumulated carriers at the F8T2/p-GaN interface form Frenkel excitons by Coulombic interaction. Then, the Frenkel excitons recombine to radiate the yellow/green emission in the F8T2 layer. The International Commission on Illumination (CIE) coordinate of the white-light emitted from the present device is at (0.28, 0.30), which is very close to the standard white light (0.33, 0.33). (C) 2017 Elsevier B.V. All rights reserved.
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