期刊
OPTICS EXPRESS
卷 25, 期 2, 页码 1381-1390出版社
OPTICAL SOC AMER
DOI: 10.1364/OE.25.001381
关键词
-
类别
资金
- King Abdulaziz City for Science and Technology (KACST) [KACST TIC R2-FP-008]
- King Abdullah University of Science and Technology (KAUST) [BAS/1/1614-01-01, BAS/1/1664-01-01]
Currently the AlGaN-based ultraviolet (UV) solid-state lighting research suffers from numerous challenges. In particular, low internal quantum efficiency, low extraction efficiency, inefficient doping, large polarization fields, and high dislocation density epitaxy constitute bottlenecks in realizing high power devices. Despite the clear advantage of quantum-confinement nanostructure, it has not been widely utilized in AlGaN-based nanowires. Here we utilize the self-assembled nanowires (NWs) with embedding quantumdisks (Qdisks) to mitigate these issues, and achieve UV emission of 337 nm at 32 A/cm(2) (80 mA in 0.5 x 0.5 mm(2) device), a turn-on voltage of similar to 5.5 V and droop-free behavior up to 120 A/cm(2) of injection current. The device was grown on a titanium-coated n-type silicon substrate, to improve current injection and heat dissipation. A narrow linewidth of 11.7 nm in the electroluminescence spectrum and a strong wavefunctions overlap factor of 42% confirm strong quantum confinement within uniformly formed AlGaN/AlGaN Qdisks, verified using transmission electron microscopy (TEM). The nitride-based UV nanowires light-emitting diodes (NWs-LEDs) grown on low cost and scalable metal/silicon template substrate, offers a scalable, environment friendly and low cost solution for numerous applications, such as solidstate lighting, spectroscopy, medical science and security. (C) 2017 Optical Society of America
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据