期刊
OPTICS EXPRESS
卷 25, 期 14, 页码 15818-15827出版社
OPTICAL SOC AMER
DOI: 10.1364/OE.25.015818
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- National University of Singapore (Trailblazer Grant) [R-263-000-B43-733]
We report the demonstration of a germanium-tin (Ge0.9Sn0.1) multiple-quantum-well p-i-n photodiode on silicon (Si) substrate for 2 mu m-wavelength light detection. Characterization of the photodetector in both direct current (DC) and radio frequency (RF) regimes was performed. At the bias voltage of -1 V, a dark current density of 0.031 A/cm(2) is realized at room-temperature, which is among the lowest reported values for Ge1-xSnx-on-Si p-i-n photodiodes. In addition, for the first time, a 3 dB bandwidth (f(3dB)) of around 1.2 GHz is achieved in Ge1-xSnx photodetectors operating at 2 mu m. It is anticipated that further device optimization would extend the f3dB to above 10 GHz. (C) 2017 Optical Society of America
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