期刊
OPTICS EXPRESS
卷 25, 期 20, 页码 24639-24649出版社
OPTICAL SOC AMER
DOI: 10.1364/OE.25.024639
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资金
- French Agence National de la Recherche (ANR) through QDOM project
- European Research Council (ERC) through GANOMS project [306664]
- European Commission through the H2020-FETPROACT project [732894 \HOT]
- European Research Council (ERC) [306664] Funding Source: European Research Council (ERC)
Optomechanical systems based on nanophotonics are advancing the field of precision motion measurement, quantum control and nanomechanical sensing. In this context III-V semiconductors offer original assets like the heteroepitaxial growth of optimized metamaterials for photon/phonon interactions. GaAs has already demonstrated high performances in optomechanics but suffers from two photon absorption (TPA) at the telecom wavelength, which can limit the cooperativity. Here, we investigate TPA-free III-V semiconductor materials for optomechanics applications: GaAs lattice-matched In0.5Ga0.5P and Al0.4Ga0.6As. We report on the fabricationand optical characterization of high frequency (500-700 MHz) optomechanical disks made out of these two materials, demonstrating high optical and mechanical Q in ambient conditions. Finally we achieve operating these new devices as laser-sustained optomechanical self-oscillators, and draw a first comparative study with existing GaAs systems. (C) 2017 Optical Society of America
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