4.5 Article

Ultralow-threshold neodymium-doped microsphere lasers on a silicon chip

期刊

OPTICS COMMUNICATIONS
卷 395, 期 -, 页码 51-54

出版社

ELSEVIER
DOI: 10.1016/j.optcom.2016.01.028

关键词

Microlaser; Microcavity; Neodymium ions

类别

资金

  1. National Basic Research Program of China [2012CB921804]
  2. National Natural Science Foundation of China, China [61435007, 11574144, 11321063]
  3. Natural Science Foundation of Jiangsu Province, China [BK20150015]
  4. Fundamental Research Funds for the Central Universities [021314380003, 021314380015]

向作者/读者索取更多资源

We demonstrate ultralow-threshold neodymium-doped silica microsphere lasers on a silicon chip with lasing wavelengths of similar to 900 nm and similar to 1060 nm. Neodymium-doped microsphere cavities are fabricated with a series of doping concentrations using silica sol-gel films. Experimentally, we observe single-mode lasing emissions from the high-Q microsphere cavities with a threshold of as low as 1.2 mu W. (C) 2016 Elsevier B.V. All rights reserved.

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