期刊
OPTICS AND LASER TECHNOLOGY
卷 92, 期 -, 页码 182-188出版社
ELSEVIER SCI LTD
DOI: 10.1016/j.optlastec.2017.01.023
关键词
Optical band gap; Chalcogenide glass; Dielectric constant; Refractive index
资金
- Botswana International University of Science and Technology (BIUST)
Thin films of Se79Te10Sb4Si7, were prepared by Electron beam deposition technique. The structure of the as prepared and annealed films has been studied by X-ray diffraction and the surface morphology by the scanning electron microscope (SEM). These studies show that there is a gradual change in structure and the formation of some polycrystalline structures in the amorphous phases is observed when the Se79Te10Sb4Bi7 film is annealed in the temperature range of 333-393 K The optical transmission of these films has been studied as a function of photon wavelength in the range 300-2500 nm. It has been found that the optical band gap E-g(opt) decreased with increasing annealing temperature in the range 333-393 K. The Urbach energy (E-u), optical conductivity (sigma(opt)), imaginary (epsilon(i)), and real (epsilon(r)) parts of the complex dielectric constant (epsilon) and lattice dielectric constant (epsilon(L)) were also determined. The changes noticed in optical parameters with increasing annealing temperature were explained on the basis of structural relaxation as well as change in defect states and density of localized states due to amorphous-crystalline transformation.
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