期刊
PHYSICAL REVIEW B
卷 98, 期 19, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.98.195144
关键词
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资金
- Vannevar Bush Faculty Fellowship program - Basic Research Office of the Assistant Secretary of Defense for Research and Engineering
- ONR [N00014-15-1-2848]
- Vicerrectoria de Investigaciones of Universidad de los Andes, Bogota, Colombia
- Colciencias [120471250659]
- FAPA program through Facultad de Ciencias
We report the existence of two competing mechanisms in the current-driven electrical breakdown of vanadium sesquioxide (V2O3) and vanadium dioxide (VO2) nanodevices. Our experiments and simulations show that the competition between a purely electronic (PE) mechanism and an electrothermal (ET) mechanism, suppressed in nanoscale devices, explains the current-driven insulator-to-metal phase transition (IMT). We find that the relative contribution of PE and ET effects is dictated by thermal coupling and resistivity, a discovery which disambiguates a long-standing controversy surrounding the physical nature of the current-driven IMT in vanadium oxides. Furthermore, we show that the electrothermally driven IMT occurs through a nanoscopic surface-confined filament. This nanoconfined filament has a very large thermal gradient, thus generating a large Seebeck-effect electric field.
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