期刊
MATERIALIA
卷 4, 期 -, 页码 147-156出版社
ELSEVIER SCI LTD
DOI: 10.1016/j.mtla.2018.09.029
关键词
Thermoelectrics; Thermal conductivity; Modulation doping; Energy-filtering interface; Nanoinclusions; Phonon scattering
The thermoelectric performance of p-type SiGe is usually inferior as compared to the n-type SiGe. In this work, we demonstrate that by in-situ creation of coherent TiO2 nanoinclusions and boron rich regions in p-type SiGe, a high figure-of-merit of similar to 1.3 is achieved at 1100 K, which is 29% higher than pristine p-type SiGe. Such a composite material (SiGe-TiO2) with improved performance was synthesized through vacuum hot pressing of p-type SiGe and TiB2 nanopowders. The phonon scattering and energy filtering of charge carriers at the TiO2/SiGe coherent interface together resulted in lowering of thermal conductivity and enhancement of the Seebeck coefficient. Modulation doping of boron along with improved densification maintain high electrical conductivity. Such a unique combinations of low thermal conductivity, high Seebeck coefficient, and high electrical conductivity of SiGe-TiO2 composite are responsible for the improvement of the thermoelectric figure-of-merit.
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