期刊
出版社
IEEE
关键词
Germanium; Triple Junction Solar Cell; MOVPE; XRD; RAS; ECV
资金
- CAPES
- CNPq
InGaP and GaAs layers have been grown over Ge:p substrate by MOVPE to obtain the bottom cell of a triple junction solar cell. The diffusion of the group V atoms through the Ge is responsible for the formation of the p-n junction. In order to characterize the doping profile, electrochemical capacitance voltage measurement is performed. The quality of the deposited layer is characterized by reflectance anisotropy spectra, x-ray diffraction and transmission electron microscopy. This study will enable us to find the optimized growth condition to maximize the device performance.
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