Growth and Characterization of Ge Junction for Triple Junction Solar Cell

InGaP and GaAs layers have been grown over Ge:p substrate by MOVPE to obtain the bottom cell of a triple junction solar cell. The diffusion of the group V atoms through the Ge is responsible for the formation of the p-n junction. In order to characterize the doping profile, electrochemical capacitance voltage measurement is performed. The quality of the deposited layer is characterized by reflectance anisotropy spectra, x-ray diffraction and transmission electron microscopy. This study will enable us to find the optimized growth condition to maximize the device performance.