High performance few-layer MoS2 transistor arrays with wafer level homogeneity integrated by atomic layer deposition

Wafer-level integration of 2D transition metal disulfide is the key factor for future large-scale integration of the continuously scaling-down devices, and has attracted great attention in recent years. Compared with other ultra-thin film growth methods, atomic layer deposition (ALD) has the advantages of excellent step coverage, uniformity and thickness controllability. In this work, we synthesized large-scale and thickness-controllable MoS2 films on sapphire substrate by ALD at 150 degrees C with molybdenum hexcarbonyl and hexamethyldisilathiane (HMDST) as precursors followed by high-temperature annealing in sulfur atmosphere. HMDST is introduced for the first time to enable a toxic-free process without hazardous sulfur precursors such as H2S and CH3SSCH3. The synthesized MoS2 retains the inherent benefits from the ALD process, including thickness controllability, reproducibility, wafer-level thickness uniformity, and high conformity. Finally, fieldeffect transistor (FET) arrays were fabricated based on the large-area ALD MoS2 films. The top-gate FETs exhibited excellent electrical performance such as high on/off current ratio over 103 and peak room-temperature mobility up to 11.56 cm(2) V-1 s(-1). This work opens up an attractive approach to realize the application of high-quality 2D materials with wafer scale homogeneity.